FCP7N60_08 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

June 2008
SuperFET^TM
FCP7N60/FCPF7N60/FCPF7N60YDTU
Features
• 650V @T_J = 150°C
• Typ. Rds(on)=0.53Ω
• Ultra low gate charge (typ. Qg=25nC)
• Low effective output capacitance (typ. Coss.eff=60pF)
• 100% avalanche tested
Description
SuperFET^TM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
GDS
TO-220
FCP Series
GD S
TO-220F
FCPF Series
{^D
z

G_{
z
z
{_S
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FCP7N60 FCPF7N60
600
7
7*
4.4
4.4*
21
21*
± 30
230
7
8.3
4.5
83
31
0.67
0.25
-55 to +150
300
FCP7N60
1.5
62.5
FCPF7N60
4.0
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
1
FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A
www.fairchildsemi.com