FCP36N60N Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET

FCP36N60N
N-Channel MOSFET
600V, 36A, 90mΩ
Features
• R_DS(on) = 81mΩ ( Typ.)@ V_GS = 10V, I_D = 18A
• Ultra low gate charge ( Typ. Qg = 86nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
November 2010
SupreMOS^TM
tm
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
DS
TO-220
FCP Series
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 3)
©2010 Fairchild Semiconductor Corporation
1
FCP36N60N Rev. A
FCP36N60N
600
±30
36
22.7
108
1800
12
3.12
100
20
312
2.6
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/^oC
o_C
o_C
FCP36N60N
0.4
0.5
62.5
Units
o_C/W
www.fairchildsemi.com