English
Language : 

FCP190N60_GF102 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel SuperFET® II MOSFET
FCP190N60_GF102
N-Channel SuperFET® II MOSFET
600 V, 20.2 A, 199 mΩ
December 2013
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 170 mΩ
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
GDS
TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
Parameter
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(TC = 25oC)
- Derate Above 25oC
FCP190N60_GF102
600
±20
(f > 1 Hz)
±30
20.2
12.7
(Note 1)
60.6
(Note 2)
400
(Note 1)
4.0
(Note 1)
2.1
100
(Note 3)
20
208
1.67
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP190N60_GF102
0.6
62.5
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
1
FCP190N60_GF102 Rev. C1
www.fairchildsemi.com
 ▷