FCP190N60_13 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel SuperFET II MOSFET

March 2013
FCP190N60 / FCPF190N60
N-Channel SuperFET^® II MOSFET
600 V, 20.2 A, 199 mΩ
Features
• 650 V @T_J = 150°C
• Max. R_DS(on) = 199 mΩ
• Ultra low gate charge (Typ. Q_g = 57 nC)
• Low effective output capacitance (Typ. C_oss.eff = 160 pF)
• 100% avalanche tested
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-CD Power Supply
Description
SuperFET^®II MOSFET is Fairchild Semiconductor^®’s first gen-
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
D
GDS
TO-220
GD S
TO-220F
G
S
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-DC
-AC
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
1
FCP190N60 / FCPF190N60 Rev. C15
FCP190N60 FCPF190N60
600
±20
(f > 1 Hz)
±30
20.2
20.2*
12.7
12.7*
(Note 1) 60.6
60.6*
(Note 2)
400
(Note 1)
4.0
(Note 1)
2.1
(Note 3)
20
100
208
39
1.67
0.31
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/^oC
o_C
o_C
FCP190N60 FCPF190N60
0.6
3.2
0.5
0.5
62.5
62.5
Unit
o_C/W
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