FCP150N65F Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel SuperFET II FRFET MOSFET

FCP150N65F
N-Channel SuperFET^® II FRFET^® MOSFET
650 V, 24 A, 150 mΩ
August 2014
Features
• 700 V @ T_J = 150°C
• Typ. R_DS(on) = 133 mΩ
• Ultra Low Gate Charge (Typ. Q_g = 72 nC)
• Low Effective Output Capacitance (Typ. C_oss(eff.) = 361 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
Description
SuperFET^® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET^® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
D
GDS
TO-220
G
S
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
(f > 1 Hz)
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP150N65F
650
±20
±30
24
14.9
72
663
4.7
2.98
100
20
298
2.38
-55 to +150
300
FCP150N65F
0.42
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2014 Fairchild Semiconductor Corporation
1
FCP150N65F Rev. C1
www.fairchildsemi.com