FCP11N60F Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

SuperFET^TM
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
• 650V @T_J = 150°C
• Typ. R_DS(on) = 0.32Ω
• Fast Recovery Type ( t_rr = 120ns)
• Ultra Low Gate Charge (typ. Q_g = 40nC)
• Low Effective Output Capacitance (typ. C_osseff.=95pF)
• 100% avalanche tested
Description
SuperFET^TM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
GDS
TO-220
Absolute Maximum Ratings
GD S
TO-220F
D
!
"
!"
G!
"
"
!
S
Symbol
Parameter
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60F FCPF11N60F
11
11 *
7
7*
33
33 *
± 30
340
11
12.5
4.5
125
36 *
1.0
0.29 *
-55 to +150
300
Units
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FCP11N60F
1.0
0.5
62.5
FCPF11N60F
3.5
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
FCP11N60F/FCPF11N60F Rev. A
www.fairchildsemi.com