FCMT199N60 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Server and Telecom Power Supplies

August 2014
FCMT199N60
N-Channel SuperFET^® II MOSFET
600 V, 20.2 A, 199 mΩ
Features
• 650 V @ T_J = 150°C
• R_DS(on) = 170 mΩ (Typ.)
• Ultra Low Gate Charge (Typ. Q_g = 57 nC)
• Low Effective Output Capacitance (Typ. C_oss(eff.) = 160 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Server and Telecom Power Supplies
• Solar Inverters
• Adaptors
Description
SuperFET^® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as server/telecom power, adaptor and solar
inverter applications.
The Power88 package is an ultra-slim surface-mount package
(1 mm high) with a low profile and small footprint (8x8 mm²).
SuperFET II MOSFET in a Power88 package offers excellent
switching performance due to lower parasitic source inductance
and separated power and drive sources. Power88 offers Mois-
ture Sensitivity Level 1 (MSL 1).
D
S2
S2
G
S1 _G
Power88
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
S1 S2
S1 : Driver Source
S2 : Power Source
Symbol
Parameter
V_DSS
V_GSS
Drain to Source Voltage
Gate to Source Voltage
-DC
-AC
(f > 1 Hz)
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
FCMT199N60
600
±20
±30
20.2
12.7
60.6
400
4.0
2.1
20
100
208
1.67
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/^oC
o_C
o_C
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (* 1 in² pad of 2 oz copper), Max.
FCMT199N60
0.6
45
Unit
o_C/W
©2014 Fairchild Semiconductor Corporation
1
FCMT199N60 Rev. C2
www.fairchildsemi.com