FCH76N60N_1112 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET

FCH76N60N
N-Channel MOSFET
600V, 76A, 36mΩ
Features
• 650V @TJ = 150^oC
• R_DS(on) = 28mΩ ( Typ.)@ V_GS = 10V, I_D = 38A
• Ultra Low Gate Charge ( Typ.Q_g = 218nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
December 2011
SupreMOS ^TM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
GD _S
TO-247
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
©2011 Fairchild Semiconductor Corporation
1
FCH76N60N Rev. C1
G
(Note 1)
(Note 2)
(Note 3)
S
Ratings
600
±30
76
48.1
228
8022
25.3
5.43
100
20
543
4.34
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Ratings
0.23
0.24
40
Units
o_C/W
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