FCH47N60_13 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel SuperFET MOSFET

FCH47N60
N-Channel SuperFET^® MOSFET
600 V, 47 A, 70 m
Features
• 650 V atT_J = 150°C
• Typ. R_DS(on) = 58 m
• Ultra-Low Gate Charge (Typ. Q_g = 210 nC)
• Low Effective Output Capacitance (Typ. C_osseff. = 420 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Solar Inverter
• AC-DC Power Supply
May 2013
Description
The FCH47N60 SuperFET^® MOSFET is Fairchild Semiconduc-
tor’s first generation of high-voltage super-junction (SJ) MOSFET
family that utilizes charge-balance technology for outstanding
low on-resistance and lower gate charge performance. This tech-
nology is tailored to minimize conduction loss and provide supe-
rior switching performance, dv/dt rate, and avalanche energy.
This SuperFET MOSFET is suitable for the switching power
applications such as PFC, server/telecom power, FPD TV power,
ATX power, and industrial power.
D
GD _S
TO-247
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted*
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
Drain to Source Voltage
Drain Current
Drain Current
Continuous (T_C = 25°C)
Continuous (T_C = 100°C)
Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
P_D
Power Dissipation
(T_C = 25°C)
Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R_JC
R_JA
R_JA
Parameter
Thermal Resistance, Junction to Case, Maximum
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction to Ambient, Maximum
©2009 Fairchild Semiconductor Corporation
1
FCH47N60 Rev. C1
G
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCH47N60_F133
600
47
29.7
141
±30
1800
47
41.7
4.5
417
3.33
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Typ.
0.24
Max.
0.3
41.7
Unit
°C/W
°C/W
°C/W
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