FCH47N60 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FCH47N60 / FCA47N60
600V N-Channel MOSFET
Features
• 650V @T_J = 150°C
• Typ. R_DS(on) = 0.058Ω
• Ultra Low Gate Charge (typ. Q_g = 210nC)
• Low Effective Output Capacitance (typ. C_osseff. = 420pF)
• 100% avalanche tested
SuperFET^TM
Description
SuperFET^TM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
GD _S
TO-247
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Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FCH47N60 FCA47N60
600
47
29.7
141
± 30
1800
47
41.7
4.5
417
3.33
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θCS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Typ.
--
0.24
Max.
0.3
--
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
FCH47N60 / FCA47N60 Rev. A
www.fairchildsemi.com