FCH35N60 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel SuperFET® MOSFET

FCH35N60
N-Channel SuperFET^® MOSFET
600 V, 35 A, 98 mΩ
March 2013
Features
• 650 V @ T_J = 150°C
• Typ.R_DS(on) = 79 mΩ
• Ultra Low Gate Charge ( Typ. Q_g = 139 nC )
• Low Effective Output Capacitance (Typ. C_oss.eff = 340 pF)
• 100% Avalanche Tested
Application
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET^® MOSFET is Fairchild Semiconductor^®’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance. This technology is tai-
lored to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
GD _S
TO-247
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate-Soure voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case-to-Heat Sink
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
1
FCH35N60 Rev. C0
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FCH35N60
600
±30
35
22.2
105
1455
35
31.25
20
312.5
2.5
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Typ.
-
0.24
-
Max.
0.4
-
42
Unit
o_C/W
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