FCH22N60N Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)

March 2013
FCH22N60N
N-Channel SupreMOS^® MOSFET
600 V, 22 A, 165 mΩ
Features
• R_DS(on) = 140 mΩ (Typ.)@ V_GS = 10 V, I_D = 11 A
• BV_DSS > 650V @ T_J = 150^oC
• Ultra Low Gate Charge (Typ. Q_g = 45 nC)
• Low Effective Output Capacitance (Typ. C_oss.eff = 196.4 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• PDP TV
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS^® MOSFET is Fairchild Semiconductor^®’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
GDS
TO-247
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Continuous (T_C = 25^oC)
Continuous (T_C = 100^oC)
Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(T_C = 25^oC)
Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
©2009 Fairchild Semiconductor Corporation
1
FCH22N60N Rev. C0
G
(Note 1)
(Note 2)
(Note 3)
S
FCH22N60N
600
±30
22
13.8
66
672
7.3
2.75
20
100
205
1.64
-55 to +150
300
FCH22N60N
0.61
0.24
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
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