FCH165N60E Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Telecom / Sever Power Supplies

FCH165N60E
N-Channel SuperFET^® II Easy-Drive MOSFET
600 V, 23 A, 165 mΩ
December 2015
Features
• 650 V @T_J = 150°C
• Typ. R_DS(on) = 132 mΩ
• Ultra Low Gate Charge (Typ. Q_g = 57 nC)
• Low Effective Output Capacitance (Typ. C_oss(eff) = 204 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies
Description
SuperFET^® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET easy-drive series offers
slightly slower rise and fall times compared to the SuperFET II
MOSFET series. Noted by the “E” part number suffix, this family
helps manage EMI issues and allows for easier design
implementation. For faster switching in applications where
switching losses must be at an absolute minimum, please
consider the SuperFET II MOSFET series.
D
G
G
D
S
TO-247
S
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCH165N60E
600
±20
±30
23
14
69
525
5
2.27
100
20
227
1.82
-55 to +150
300
FCH165N60E
0.55
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2015 Fairchild Semiconductor Corporation
1
FCH165N60E Rev. C0
www.fairchildsemi.com