FCH041N60F Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET, FRFET

FCH041N60F
600V N-Channel MOSFET, FRFET
March 2013
SuperFET II ^®
Features
• R_DS(on)= 36mΩ (Typ)
• Ultra low gate charge (Typ. Q_g=277nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS Compliant
Description
SuperFET^®II is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET^®II is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
GD _S
TO-247
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-DC
-AC
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
S
(f>1Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCH041N60F
600
±20
30
76
48.1
228
2025
15
5.95
100
50
595
4.76
-55 to +150
300
FCH041N60F
0.21
40
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2013 Fairchild Semiconductor Corporation
1
FCH041N60F Rev. C3
www.fairchildsemi.com