FCD9N60NTM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET

FCD9N60NTM
N-Channel MOSFET
600V, 9A, 0.385mΩ
Features
• R_DS(on) = 0.330Ω ( Typ.)@ V_GS = 10V, I_D = 4.5A
• Ultra Low Gate Charge (Typ.Qg = 17.8nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
February 2010
SupreMOS^TM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advance technology and precise process
control, SupreMOS provide world class Rsp, superior switching
performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
S
D-PAK
(TO-252)
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 3)
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
D
G
S
FCD9N60N
600
±30
9.0
5.7
27
135
9.0
9.3
100
15
92.6
0.74
-55 to +150
300
FCD9N60N
1.35
62.5
©20010 Fairchild Semiconductor Corporation
1
FCD9N60NTM Rev. A
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
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