FCD380N60ECT-ND Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 mΩ

FCD380N60E
N-Channel SuperFET^® II Easy-Drive MOSFET
600 V, 10.2 A, 380 mΩ
December 2013
Features
• 650 V @ T_J = 150°C
• Typ. R_DS(on) = 320 mΩ
• Ultra Low Gate Charge (Typ. Q_g = 34 nC)
• Low Effective Output Capacitance (Typ. C_oss(eff.) = 97 pF)
• 100% Avalanche Tested
• An Integrated Gate Resistor
• RoHS Compliant
Description
SuperFET^® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET easy-drive series offers slightly slower
rise and fall times compared to the SuperFET II MOSFET
series. Noted by the "E" part number suffix, this family helps
manage EMI issues and allows for easier design implementa-
tion. For faster switching in applications where switching losses
must be at an absolute minimum, please consider the Super-
FET II MOSFET series.
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCD380N60E
600
±20
±30
10.2
6.4
30.6
211.6
2.3
1.06
100
20
106
0.85
-55 to +150
300
FCD380N60E
1.18
100
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FCD380N60E Rev. C2
www.fairchildsemi.com