FCD380N60E Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ

March 2013
FCD380N60E
N-Channel SuperFET^® II MOSFET
600 V, 10.2 A, 380 mΩ
Features
• 650 V @T_J = 150°C
• Max. R_DS(on) = 380 mΩ
• Ultra Low Gate Charge (Typ. Q_g = 34 nC)
• Low Effective Output Capacitance (Typ. C_oss.eff = 97 pF)
• 100% Avalanche Tested
Description
SuperFET^®II MOSFET is Fairchild Semiconductor^®’s first gen-
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
D
D
G
S
D-PAK
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FCD380N60E
600
±20
±30
10.2
6.4
30.6
211.6
2.3
1.06
20
100
106
0.85
-55 to +150
300
FCD380N60E
1.18
100
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FCD380N60E Rev. C1
www.fairchildsemi.com