FCB20N60_05 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FCB20N60
600V N-Channel MOSFET
Features
• 650V @T_J = 150°C
• Typ. R_DS(on) = 0.15Ω
• Ultra low gate charge (typ. Q_g = 75nC)
• Low effective output capacitance (typ. C_oss.eff = 165pF)
• 100% avalanche tested
July 2005
SuperFET^TM
Description
SuperFET^TM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
D
GS
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA*
Thermal Resistance, Junction-to-Ambient*
R_θJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount
D
{
z

G_{
z
z
{
S
FCB20N60
600
20
12.5
60
± 30
690
20
20.8
4.5
208
1.67
-55 to +150
300
FCB20N60
0.6
40
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
FCB20N60 Rev. A1
www.fairchildsemi.com