FCB20N60F Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V N-CHANNEL FRFET

FCB20N60F
600V N-CHANNEL FRFET
Features
• 650V @ T_J = 150°C
• Typ.Rds(on)=0.15:
• Fast RecoveryType (t_rr = 160ns)
• Ultra low gate charge (typ.Qg=75nC)
• Low effective output capacitance (typ.Coss.eff=165pF)
• 100% avalanche tested
D
December 2006
SuperFET^TM
Description
SuperFET^TM is,Farichild’s proprietary,new generation ofhigh
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss,provide superior switching performance,and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently,SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GS
AbsoluteMaxim um Ratings
Sym bol
Param eter
V_DSS
I_D
I_DM
Drain-Source Voltage
Drain Current
Drain Current
-Continuous(T_C = 25qC)
-Continuous(T_C = 100qC)
-Pulsed
(Note 1)
V_GSS
E_AS
I_AR
E_AR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
PeakDiode Recoverydv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation (T_C = 25qC)
-Derate above 25qC
T_J,T_STG
T_L
Operatingand Storage Temperature Range
Maximum Lead Temperature for SolderingPurpose,
1/8”from Case for 5Seconds
Therm alCharacteristics
Sym bol
Param eter
R_TJC
Thermal Resistance,Junction-to-Case
R_TJA*
Thermal Resistance,Junction-to-Ambient*
R_TJA
Thermal Resistance,Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB M ount)
©2006 Fairchild Semiconductor Corporation
1
FCB20N60F Rev.A2
G
S
FCB20N60F
600
20
12.5
60
r 30
690
20
20.8
50
208
1.67
-55 to +150
300
FCB20N60F
0.6
40
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/qC
qC
qC
Unit
qC/W
qC/W
qC/W
www.fairchildsemi.com