FCA35N60 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FCA35N60
600V N-Channel MOSFET
Features
• 650V @ T_J = 150°C
• Typ.R_DS(on) = 0.079Ω
• Ultra low gate charge ( Typ. Q_g = 139nC )
• Low effective output capacitance ( Typ. C_oss.eff = 340pF )
• 100% avalanche tested
March 2009
SuperFET^TM
Description
SuperFET^TM is Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge bal-
ance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
G DS
TO-3PN
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate-Soure voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case-to-Heat Sink
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
600
±30
35
22.2
105
1455
35
31.25
20
312.5
2.5
-55 to +150
300
Typ.
-
0.24
-
Max.
0.4
-
42
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FCA35N60 Rev. A
www.fairchildsemi.com