FCA16N60 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FCA16N60
600V N-Channel MOSFET
Features
• 650V @T_J = 150°C
• Typ. Rds(on)=0.22Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested
November 2005
SuperFET ^TM
Description
SuperFET^TM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GDS
TO-3P
FCA Series
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
V_GSS
E_AS
I_AR
E_AR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
S
FCA16N60
600
16
10.1
48
± 30
450
16
16.7
4.5
167
1.33
-55 to +150
300
FCA16N60
0.75
41.7
©2005 Fairchild Semiconductor Corporation
1
FCA16N60 REV. A
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
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