ES2A Datasheet, PDF (1/3 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS

Discrete POWER & Signal
Technologies
ES2A - ES2D
Features
• For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for
high efficiency.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
2.0 Ampere Superfast Rectifiers
0.083 (2.108)
0.075 (1.905)
2
0.185 (4.699)
0.160 (4.064)
1
0.155 (3.937)
0.130 (3.302)
0.220 (5.588)
0.200 (5.080)
0.096 (2.438)
0.083 (2.108)
0.050 (1.270) 0.008 (0.203)
0.030 (0.762) 0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
RθJL
Tstg
TJ
Average Rectified Current
.375 " lead length @ TA = 110°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient**
Thermal Resistance, Junction to Lead**
Storage Temperature Range
Operating Junction Temperature
2.0
50
1.66
13.3
75
20
-50 to +150
-50 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Units
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 100°C
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Maximum Forward Voltage @ 2.0 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
T_A = 25°C unless otherwise noted
Device
2A
2B
2C
50
100
150
35
70
105
50
100
150
10
350
20
0.90
18
Units
2D
200
V
140
V
200
V
µA
µA
nS
V
pF
©1999 Fairchild Semiconductor Corporation
ES2A-ES2D, Rev. A