DF005S Datasheet, PDF (1/3 Pages) Won-Top Electronics – 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

Discrete POWER & Signal
Technologies
DF005S - DF10S
Features
• Surge overload rating: 50 amperes
peak.
• Glass passivated junction.
• Low leakage.
SDIP
LOW PROFILE ALSO AVAILABLE
BODY - - 0.102 (2.591)*
0.095 (2.413)*
1.5 Ampere Bridge Rectifiers
0.042 (1.067)
0.038 (0.965)
0.255 (6.477)
0.245 (6.223)
0.205 (5.207)
0.195 (4.953)
Dimensions are in:
inches (mm)
0.009 (0.229)
Typical
0.310 (7.874)
0.290 (7.366)
0.008 (0.203)
0.004 (0.102)
0.410 (10.414)
0.360 ( 9.144)
0.335 (8.509)
0.320 (8.128)
0.135 (3.429)*
0.115 (2.921)*
0.060 (1.524)
0.040 (1.016)
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
Tstg
TJ
Average Rectified Current
@ TA = 40°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Storage Temperature Range
Operating Junction Temperature
1.5
50
3.1
25
40
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Units
A
A
W
mW/°C
°C/W
°C
°C
Electrical Characteristics T_A = 25°C unless otherwise noted
Parameter
005S 01S
Peak Repetitive Reverse Voltage
50
100
Maximum RMS Bridge Input Voltage
35
70
DC Reverse Voltage (Rated VR)
Maximum Reverse Leakage,
total bridge @ rated VR TA = 25°C
TA = 125°C
Maximum Forward Voltage Drop,
per bridge
@ 1.0 A
I²t rating for fusing
t < 8.35 ms
50
100
Typical Junction Capacitance, per leg
VR = 4.0 V, f = 1.0 MHz
Device
02S
04S
06S
200
400
600
140
280
420
200
400
600
5.0
500
1.1
10
25
Units
08S
10S
800 1000
V
560
700
V
800 1000
V
µA
µA
V
A²Sec
pF
©1998 Fairchild Semiconductor Corporation
DF005S-DF10S, Rev. A