DF005M_01 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Bridge Rectifiers

DF005M - DF10M
Features
• Surge overload rating: 50 amperes
peak.
• Glass passivated junction.
• Low leakage.
• UL certified, UL #E111753.
DIP
Bridge Rectifiers
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
005M 01M 02M 04M 06M
V_RRM
Maximum Repetitive Reverse Voltage
50 100 200 400 600
V_RMS
Maximum RMS Bridge Input Voltage
35 70 140 280 420
V_R
DC Reverse Voltage (Rated V_R)
50 100 200 400 600
I_F(AV)
I_FSM
T_stg
T_J
Average Rectified Forward Current,
@ T_A = 40°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
1.5
50
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
08M
800
560
800
10M
1000
700
1000
Units
V
V
V
A
A
°C
°C
Thermal Characteristics
Symbol
Parameter
P_D
Power Dissipation
R_θJA
Thermal Resistance, Junction to Ambient,*
per leg
*Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
V_F
Forward Voltage, per bridge @ 1.0 A
I_R
Reverse Current, total bridge @ rated V_R
T_A = 25°C
T_A = 125°C
I²t rating for fusing
t < 8.35 ms
C_T
Total Capacitance, per leg
V_R = 4.0 V, f = 1.0 MHz
Value
3.1
40
Device
1.1
5.0
500
10
25
Units
W
°C/W
Units
V
µA
µA
A²s
pF
2001 Fairchild Semiconductor Corporation
DF005M-DF10M, Rev. C