DF005M Datasheet, PDF (1/2 Pages) Semtech Corporation – MINIATURE GLASS PASSIVATED SINGLE - PHASE - RECTIFIER

Discrete POWER & Signal
Technologies
DF005M - DF10M
Features
• Surge overload rating: 50 amperes
peak.
• Glass passivated junction.
• Low leakage.
0.255 (6.477)
0.245 (6.223)
0.022 (0.559)
0.018 (0.457)
0.075 (1.905)
0.055 (1.397)
1.5 Ampere Bridge Rectifiers
0.335 (8.509)
0.320 (8.128)
+
0.350 (8.890)
0.300 (7.620)
0.315 (8.001)
0.285 (7.239)
0.205 (5.207)
0.195 (4.953)
0.130 (3.302)*
0.120 (3.408)*
0.185 (4.699)**
0.150 (3.810)**
0.045 (1.143)
0.035 (0.889)
LOW PROFILE ALSO AVAILABLE
BODY - - 0.102 (2.591)*
0.095 (2.413)*
LEAD - - 0.080 (2.032)**
0.050 (1.270)**
DIP
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
Tstg
TJ
Average Rectified Current
@ TA = 40°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Storage Temperature Range
Operating Junction Temperature
1.5
50
3.1
25
40
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Units
A
A
W
mW/°C
°C/W
°C
°C
Electrical Characteristics T_A = 25°C unless otherwise noted
Parameter
Device
Units
005M 01M
02M
04M
06M
08M
10M
Peak Repetitive Reverse Voltage
50
100
200
400
600
800 1000
V
Maximum RMS Bridge Input Voltage
35
70
140
280
420
560
700
V
DC Reverse Voltage (Rated VR)
Maximum Reverse Leakage,
total bridge @ rated VR TA = 25°C
TA = 125°C
Maximum Forward Voltage Drop,
per bridge
@ 1.0 A
I²t rating for fusing
t < 8.35 ms
50
100
200
400
600
800 1000
V
5.0
µA
500
µA
1.1
V
10
A²Sec
Typical Junction Capacitance, per leg
25
pF
VR = 4.0 V, f = 1.0 MHz
ã 1998 Fairchild Semiconductor Corporation