D45H8 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Power Amplifier

Discrete POWER & Signal
Technologies
D45H8
B
C
E
TO-220
NZT45H8
C
SOT-223
E
C
B
PNP Power Amplifier
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5Q.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
I_C
T_J, T_stg
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
8.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
D45H8
PD
Total Device Dissipation
60
Derate above 25°C
480
Rθ_JC
Thermal Resistance, Junction to Case
2.1
RθJA
Thermal Resistance, Junction to Ambient
62.5
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
*NZ T45H8
1.5
12
83.3
Units
V
A
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation