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| D45H2A Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,30V,60W) | |||
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D45H2A
PNP Power Amplifier
⢠This device is designed for power amplifier, regulator and switching
circuits where speed is important.
⢠Sourced from process 5Q.
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
1
TO-220
1. Base 2. Collector 3. Emitter
Value
30
8.0
- 55 ~ 150
Units
V
A
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics
IC = 100mA, IB = 0
VCB = 60V, IE = 0
VEB = 5V, IC = 0
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = 5V, IC = 8A
VCE = 5V, IC = 10A
VCE = 5V, IC = 12A
IC = 8A, IB = 0.4A
IC = 8A, IB = 0.8A
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 500mA
Min. Typ. Max. Units
30
V
10 µA
100 µA
100
80
65
1
V
1.5 V
25
MHz
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
60
480
2.1
62.5
Units
W
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, February 2002
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