D45H11_12 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – PNP Power Amplifier

D45H11
PNP Power Amplifier
June 2012
• This device is designed for power amplifier, regulator and switching circuits where speed is important.
• Sourced from process 5Q.
1
TO-220
Mark: D45H11
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V_CEO
I_C
T_J, T_STG
Parameter
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
-80
-10
-55 to +150
Units
V
A
°C
Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO Collector-Emitter Breakdown Voltage I_C = -100mA, I_B = 0
I_CBO
Collector-Cutoff Current
V_CB = -80V, I_E = 0
I_EBO
Emitter-Cutoff Current
V_EB = -5V, I_C = 0
On Characteristics *
h_FE
DC Current Gain
V_{CE (sat)} Collector-Emitter Saturation Voltage
V_{BE (sat)} Base-Emitter Saturation Voltage
V_{BE (on)}
Base-Emitter On Voltage
Small Signal Characteristics
V_CE = -1V, I_C = -2A
V_CE = -1V, I_C = -4A
I_C = -8A,I_B = -0.4A
I_C = -8A,I_B = -0.8A
V_CE = -2V, I_C = -10mA
f_T
Current Gain Bandwidth Product
I_C = -500mA, V_CE = -10V
Min. Max. Units
-80
V
-10
μA
-100
μA
60
40
-1.0
V
-1.5
V
-0.54 -0.65
V
40
MHZ
Thermal Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Max.
Units
P_D
Total Device Dissipation
Derate above 25°C
60
W
480
mW/°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.1
°C/W
62.5
°C/W
* Note) Device mounted on FR-$ PCB 36mm*18mm*1.5mm: Mounting pad for the collector lead min. 6cm2.
© 2012 Fairchild Semiconductor Corporation
D45H11 Rev. A1
1
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