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| D45C8_10 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP Power Amplifier | |||
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D45C8
PNP Power Amplifier
⢠Sourced from process 5P.
January 2010
1
TO-220
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VCEO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
-60
-4.0
-55 to +150
Units
V
A
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0
ICES
Collector-Emitter-(Base)Short
VCE = -70V, IE = 0
ICEO
Collector-Emitter-(Base)Open
VCE = -55V, IE = 0
IEBO
Emitter-Base Current
VEB = -5.0V, IB = 0
On Characteristics
hFE
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
Small Signal Characteristics
VCE = -1.0V, IC = -0.2A
VCE = -1.0V, IC = -2.0A
IC = -1.0A, IB = -50mA
IC = -1.0A, IB = -100mA
Cob
Output Capacitance
VCB = -10V, f = 1.0MHz
fT
Current Gain Bandwidth Product
IC = -20mA, VCE = -4.0V
tON
td, Delay Time
tr, Rise Time
tOFF
ts, Storage Time
tf, Fall Time
IC = -1.0A,
IB1 = IB2 = -0.1A
VCC = -30V, tp = 25μs
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Min.
-60
40
20
32
Typ.
59
502
474
59
Max.
60
480
2.1
62.5
Max. Units
V
-10
μA
-100 μA
-100 μA
120
-0.5
V
-1.3
V
125
pF
MHz
ns
ns
Units
W
mW/°C
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
D45C8 Rev. B2
1
www.fairchildsemi.com
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