D45C8 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP Power Amplifier

D45C8
PNP Power Amplifier
• Sourced from process 5P.
April 2005
1
TO-220
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings T_a = 25°C unless otherwise noted
Symbol
Parameter
V_CEO
I_C
T_J, T_STG
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
-60
-4.0
-55 to +150
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO Collector-Emitter Breakdown Voltage
I_CES
Collector-Cutoff Current
I_EBO
Emitter-Cutoff Current
On Characteristics *
I_C = -100mA, I_B = 0
V_CB = -70V, I_E = 0
V_EB = -5.0V, I_B = 0
h_FE
DC Current Gain
V_{CE (sat)} Collector-Emitter Saturation Voltage
V_{BE (sat)}
Base-Emitter Saturation Voltage
Small Signal Characteristics
V_CE = -1V, I_C = -0.2A
V_CE = -1V, I_C = -2.0A
I_C = -1.0A,I_B = -50mA
I_C = -1.0A,I_B = -100mA
f_T
Current Gain Bandwidth Product
I_C = -20mA, V_CE = -4.0V
Min.
-60
40
20
32
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
60
480
2.1
62.5
Units
V
A
°C
Max. Units
V
-10
µA
-100
µA
120
-0.5
V
-1.3
V
pF
Units
W
mW/°C
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
D45C8 Rev. A
www.fairchildsemi.com