D45C11_10 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP Current Driver Transistor

D45C11
PNP Current Driver Transistor
January 2010
Features
• This device is designed for power amplifier, regulator and switching
circuits where speed is important.
• Sourced from Process 5P.
• NZT751 for characteristics.
1
TO-220
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
I_C
T_J, T_STG
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-80
V
-4.0
A
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
60
480
2.1
62.5
Units
W
mW/°C
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
D45C11 Rev. B2
1
www.fairchildsemi.com