D44H11TU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

D44H11TU
NPN Epitaxial Silicon Transistor
• Low Collector-Emitter Saturation Voltage : V_CE(sat) = 1V (Max.) @ 8A
• Fast Switching Speeds
• Complement to KSE45H
March 2009
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CEO
V_EBO
I_C
I_CP
P_C
T_J
T_STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector-Current (Pulse)
Collector Dissipation (T_C=25°C)
Collector Dissipation (T_a=25°C)
Junction Temperature
Storage Temperature
Value
80
5
10
20
50
1.67
150
- 55 ~ 150
Units
V
V
A
A
W
W
°C
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ.
BV_CEO Collector-Emitter Breakdown Voltage I_C = 10mA, I_B = 0
80
BV_EBO Emitter-Base Breakdown Voltage
I_E = 500μA, I_C= 0
5
I_CES
Collector Cut-off Current
V_CE = Rated V_CEO, V_EB = 0
I_EBO
Emitter Cut-off Current
V_EB = 5V, I_C = 0
h_FE
DC Current Gain
V_CE = 1V, I_C = 2A
60
V_CE(sat) Collector-Emitter Saturation Voltage I_C = 8A, I_B = 0.4A
V_BE(sat) Base-Emitter Saturation Voltage
I_C = 8A, I_B = 0.8A
f_T
Current Gain Bandwidth Product
V_CE = 10V, I_C = 0.5A
50
C_ob
Output Capacitance
V_CB = 10V, f = 1MHz
130
t_ON
Turn On Time
300
t_STG
Storage Time
V_CC = 20V, I_C = 5A
I_B1 = - I_B2 = 0.5A
500
t_F
Fall Time
140
NOTES:
1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) These ratings are based on a maximum junction temperature of 150degrees C.
© 2009 Fairchild Semiconductor Corporation
D44H11TU Rev. B1
1
Max.
10
100
Units
V
V
μA
μA
1
V
1.5
V
MHz
pF
ns
ns
ns
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