D44C8_10 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN Power Amplifier

D44C8
NPN Power Amplifier
• Sourced from process 4P.
January 2010
1
TO-220
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_CEO
I_C
T_J, T_STG
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)CEO Collector-Emitter Breakdown Voltage I_C = 100mA, I_B = 0
I_CES
Collector-Emitter-(Base)Short
V_CE = 70V, I_E = 0
I_EBO
Emitter-Cutoff Current
V_EB = 5.0V, I_B = 0
On Characteristics
h_FE
DC Current Gain
V_{CE (sat)} Collector-Emitter Saturation Voltage
V_{BE (sat)} Base-Emitter Saturation Voltage
Small Signal Characteristics
V_CE = 1.0V, I_C = 0.2A
V_CE = 1.0V, I_C = 2.0A
I_C = 1.0A, I_B = 50mA
I_C = 1.0A, I_B = 100mA
C_ob
Output Capacitance
V_CB = 10V, f = 1.0MHz
f_T
Current Gain Bandwidth Product
I_C = 20mA, V_CE = 4.0V
t_ON
t_d, Delay Time
t_r , Rise Time
t_OFF
t_s , Storage Time
t_f , Fall Time
I_C = 1.0A,
I_B1 = I_B2 = 0.1A,
V_CC = 30V, tp = 25μs
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
R_θJC
R_θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
60
4.0
-55 to +150
Units
V
A
°C
Min. Typ. Max. Units
60
V
10
μA
100
μA
40
20
120
0.5
V
1.3
V
100
pF
40
MHz
54
490
ns
636
59
ns
Max.
60
480
2.1
62.5
Units
W
mW/°C
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
D44C8 Rev. B2
1
www.fairchildsemi.com