CQX15 Datasheet, PDF (1/3 Pages) QT Optoelectronics – GAAS INFRARED EMITTING DIODE

CQX15, CQX17
GaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
0.030 (0.76)
NOM
1.00 (25.4)
MIN
0.155 (3.94)
MAX
ANODE
(CASE)
0.100 (2.54)
0.050 (1.27)
DESCRIPTION
The CQX15 and CQX17 series are
940nm LEDs in a wide angle, TO-46
package.
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched
to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
• European “Pro Electron” registered
SCHEMATIC
ANODE
3
(Connected
To Case)
CATHODE
1
0.040 (1.02)
0.040 (1.02)
NOTES:
13
45°
Ø0.020 (0.51) 2X
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P_O, is the total power radiated by the device into
a solid angle of 2 ! steradians.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)^{(3,4,5 and 6)}
Soldering Temperature (Flow)^{(3,4 and 6)}
Continuous Forward Current
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Power Dissipation (T_A = 25°C)⁽¹⁾
Power Dissipation (T_C = 25°C)⁽²⁾
Symbol
T_OPR
T_STG
T_SOL-I
T_SOL-F
I_F
I_F
V_R
P_D
P_D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power CQX15 ⁽⁷⁾
Total Power CQX17 ⁽⁷⁾
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
I_F = 100 mA
I_F = 100 mA
V_R = 3 V
I_F = 100 mA
I_F = 100 mA
SYMBOL
MIN
"_PE
—
#
—
V_F
—
I_R
—
P_O
5.4
P_O
1.5
t_r
—
t_f
—
TYP
MAX
940
—
±40
—
—
1.7
—
10
—
—
—
—
1.0
—
1.0
—
UNITS
nm
Deg.
V
µA
mW
mW
µs
µs
 2001 Fairchild Semiconductor Corporation
DS300285 4/26/01
1 OF 3
www.fairchildsemi.com