BUZ11 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET

Data Sheet
BUZ11
June 1999
File Number 2253.2
[ /Title
(BUZ1
1)
/Sub-
ject
(30A,
50V,
0.040
Ohm,
N-
Chan-
nel
Power
MOS-
FET)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Chan-
nel
Power
MOS-
FET,
TO-
220AB
)
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
30A, 50V, 0.040 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ11
TO-220AB
BUZ11
NOTE: When ordering, use the entire part number.
Features
• 30A, 50V
• r_DS(ON) = 0.040Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2001 Fairchild Semiconductor Corporation
BUZ1 Rev. A