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| BUT12 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon diffused power transistors | |||
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BUT12/12A
High Voltage Power Switching Applications
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BUT12
: BUT12A
VCEO
Collector-Emitter Voltage
: BUT12
: BUT12A
IC
ICP
IB
PC
TJ
TSTG
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus) * Collector-Emitter Sustaining Voltage
ICES
Collector Cut-off Current
IEBO
Emitter Cut-off Current
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
* Pulsed Test: PW = 300µs, duty cycle = 1.5%
IC = 100mA, L = 25mH
VCE = VCES, VBE = 0
VBE = 9V, IC = 0
IC = 6A, IB = 1.2A
IC = 6A, IB = 1.2A
VCC = 250V, IC = 6A
IB1 = - IB2 = 1.2A
RL = 41.6â¦
Value
850
1000
400
450
8
20
4
100
150
- 65 ~ 175
Units
V
V
V
V
A
A
A
W
°C
°C
Min.
400
Typ.
Max.
1
10
1.5
1.5
1
4
0.8
Units
V
mA
mA
V
V
µs
µs
µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
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