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| BUT11AFTU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage Power Switching Applications | |||
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BUT11F/11AF
High Voltage Power Switching Applications
NPN Silicon Transistor
1
TO-220F
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BUT11F
: BUT11AF
VCEO
Collector-Emitter Voltage
: BUT11F
: BUT11AF
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
850
1000
400
450
9
5
10
2
4
40
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: BUT11F
: BUT11AF
IC = 100mA, IB = 0
ICES
Collector Cut-off Current
: BUT11F
: BUT11AF
IEBO
VCE(sat)
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BUT11F
: BUT11AF
VBE(sat)
Base-Emitter Saturation Voltage
: BUT11F
: BUT11AF
tON
tSTG
tF
Turn On Time
Storage Time
Fall Time
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
VCE = 850V, VBE = 0
VCE = 1000V, VBE = 0
VBE = 9V, IC = 0
IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A
IC = 3A, IB = 0.6A
IC = 2.5A, IB = 0.5A
VCC = 250V, IC = 2.5A
IB1 = -IB2 = 0.5A
RL = 100â¦
Min. Typ. Max. Units
400
V
450
V
1
mA
1
mA
10
mA
1.5
V
1.5
V
1.3
V
1.3
V
1
µs
4
µs
0.8
µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Typ
RθjC
Thermal Resistance, Junction to Case
Max
3.125
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2, August 2001
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