BU407 Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

BU407/407H
High Voltage Switching
• Use In Horizontal Deflection Output Stage
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
Value
330
150
6
7
10
4
60
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_CES
I_EBO
V_CE(sat)
V_BE(sat)
f_T
t_OFF
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BU407
: BU407H
Base-Emitter Saturation Voltage
: BU407
: BU407H
Current Gain Bandwidth Product
Turn OFF Time
: BU407
: BU407H
V_CE = 330V, V_BE = 0
V_CE = 200V, V_BE = 0
V_CE = 200V, V_BE = 0 @ T_C= 150°C
V_BE = 6V, I_C = 0
I_C = 5A, I_B = 0.5A
I_C = 5A, I_B = 0.8A
I_C = 5A, I_B = 0.5A
I_C = 5A, I_B = 0.8A
V_CE = 10V, I_C = 0.5A
I_C = 5A, I_B = 0.5A
I_C = 5A, I_B = 0.8A
Min.
10
Max.
5
100
1
1
1
1
1.2
1.2
0.75
0.4
Units
mA
µA
mA
mA
V
V
V
V
MHz
µs
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000