BU406_13 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

September 2013
BU406
NPN Epitaxial Silicon Transistor
Features
• High-Voltage Capability
• High Switching Speed
• Low Saturation Voltage
Applications
• Horizontal deflection for TV and CRT
Description
The BU406 is a 400 V 7 A Silicon Epitaxial Planar
NPN Transistor. The BU406 is designed for high
speed switching applications which utilizes the indus-
try standard TO-220 package offering flexibility in
design and excellent Power Dissipation.
1
TO-220
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
BU406
BU406TU
Marking
BU406
BU406
Package
TO-220 3L
Packing Method
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_C = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
400
V
200
V
6
V
7
A
10
A
4
A
60
W
150
°C
- 55 to 150
°C
© 2000 Fairchild Semiconductor Corporation
BU406 Rev. 1.2.1
1
www.fairchildsemi.com