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BSS84-NL Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – −0.13A, −50V. RDS(ON) = 10Ω @ VGS = −5 V | |||
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July 2002
BSS84
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect
transistors are produced using Fairchildâs proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize on-
state resistance, provide rugged and reliable
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
0.13A DC and can deliver current up to 0.52A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
Features
⢠â0.13A, â50V. RDS(ON) = 10⦠@ VGS = â5 V
⢠Voltage controlled p-channel small signal switch
⢠High density cell design for low RDS(ON)
⢠High saturation current
D
D
SOT-23
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1)
PD
TJ, TSTG
TL
Maximum Power Dissipation
(Note 1)
Derate Above 25°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16â from Case for 10 Seconds
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
SP
BSS84
7ââ
G
S
Ratings
â50
±20
â0.13
â0.52
0.36
2.9
â55 to +150
300
350
Tape width
8mm
Units
V
V
A
W
mW/°C
°C
°C/W
Quantity
3000 units
ï2002 Fairchild Semiconductor Corporation
BSS84 Rev B(W)
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