English
Language : 

BSS79C Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier
BSS79C
NPN General Purpose Amplifier
• This device is for use as a medium power amplifier and swith requiring
C
collector currents up to 500mA.
• Sourced from process 19.
• See BCW65C for characteristics.
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC
Collector Current
- Continuous
800
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0
75
V(BR)CBO Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
40
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
6.0
ICBO
Collector-Cutoff Current
VCB = 60V
VCB = 60V, Ta = 150°C
IEBO
Emitter-Cutoff Current
VEB = 3.0V, IC = 0
On Characteristics *
hFE
DC Current Gain
IC = 150mA, VCE = 10V
100
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Small Signal Characteristics
fT
Current Gain - Bandwidth Product
CCB
Collector-Base Capacitance
Switching Characteristics
IC = 20mA, VCE = 20V, f = 100MHz
VCB = 10V, IE = 0, f = 1.0MHz
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = 30V, VBE(OFF) = 0.5V,
IC = 150mA, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
E
B SOT-23
Mark: CF
Units
V
V
V
mA
°C
Max.
10
10
10
300
0.3
1.0
250
8.0
10
10
265
60
Units
V
V
V
nA
µA
nA
V
V
MHz
pF
ns
ns
ns
ns
©2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
 ▷