BSS138W Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

December 2010
BSS138W
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistor. These products have been designed to
minimize on-state resistance while provide rugged,
reliable, and fast switching performance.These prod-
ucts are particularly suited for low voltage, low current
applications such as small servo motor control, power
MOSFET gate drivers, and other switching applica-
tions.
Features
• R_DS(ON) = 3.5Ω @ V_GS = 10V, I_D = 0.22A
R_DS(ON) = 6.0Ω @ V_GS = 4.5V, I_D = 0.22A
• High density cell design for extremely low R_DS(ON)
• Rugged and Reliable
• Compact industry standard SOT-323 surface mount
package
D
S
G
SOT-323
Marking : 138
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note1)
T_J, T_STG
T_L
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Value
50
±20
0.21
0.84
-55 to +150
300
Thermal Characteristics
Symbol
P_D
R_θJA
Parameter
Maximum Power Dissipation
Derate Above 25°C
Thermal Resistance, Junction to Ambient
(Note1)
(Note1)
Package Marking and Ordering Information
Device Marking
138
Device
BSS138W
Reel Size
7’’
Value
340
2.72
367
Tape width
8mm
Units
V
V
A
A
°C
°C
Units
mW
mW/°C
°C/W
Quantity
3000 units
© 2010 Fairchild Semiconductor Corporation
BSS138W Rev. A0
1
www.fairchildsemi.com