BSS138K_13 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Logic Level Enhancement Mode Field Effect Transistor

May 2013
BSS138K
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
D
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free / RoHS Compliant
S
G
SOT - 23
Marking : SK
• Green Compound
• ESD HBM = 2000 V as per JEDEC A114A; ESD CDM = 2000 V as per JEDEC C101C
Absolute Maximum Ratings⁽¹⁾
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
50
V
±12
V
0.22
A
0.88
T_J
Operating Junction Temperature Range
-55 to +150
°C
T_STG Storage Temperature Range
-55 to +150
°C
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Thermal Characteristics
Symbol
Parameter
P_D
R_θJA
Note:
Total Device Dissipation
Derating above T_A = 25°C
Thermal Resistance, Junction to Ambient⁽²⁾
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Value
350
2.8
350
Units
mW
mW/°C
°C/W
Package Marking and Ordering Information
Device Marking
SK
Device
BSS138K
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
© 2010 Fairchild Semiconductor Corporation
BSS138K Rev. 1.3.0
1
www.fairchildsemi.com