BSS138K Datasheet, PDF (1/6 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

May 2010
BSS138K
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• Green Compound
• ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101C
D
S
G
SOT - 23
Marking : SK
Absolute Maximum Ratings * T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_DSS Drain-Source Voltage
50
V
V_GSS Gate-Source Voltage
±12
V
I_D
Drain Current
Continuous
0.22
Pulsed
0.88
A
T_J
T_STG
Operating Junction Temperature Range
Storage Temperature Range
-55 to +150
°C
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
Thermal Characteristics
Symbol
Parameter
Value
P_D
Total Device Dissipation
350
Derating above T_A = 25°C
2.8
R_θJA Thermal Resistance, Junction to Ambient *
350
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Units
mW
mW/°C
°C/W
© 2010 Fairchild Semiconductor Corporation
BSS138K Rev. A2
1
www.fairchildsemi.com