BSS123W Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

December 2015
BSS123W
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Features
• 0.17 A, 100 V, R_DS(ON) = 6 Ω at V_GS = 10 V
R_DS(ON) = 10 Ω at V_GS = 4.5 V
• High Density Cell Design for Low R_DS(ON)
• Rugged and Reliable
• Ultra Small Surface Mount Package
• Very Low Capacitance
• Fast Switching Speed
• Lead Free / RoHS Compliant
Description
This N-channel enhancement mode field effect transistor
is produced using high cell density, trench MOSFET
technology. This product minimizes on-state resistance
while providing rugged, reliable and fast switching perfor-
mance. This product is particularly suited for low-voltage,
low-current applications such as small servo motor con-
trol, power MOSFET gate drivers, logic level transistor,
high speed line drivers, power management/power sup-
ply and switching applications.
D
D
S
G ^SOT-323
G
S
Ordering Information
Part Number
BSS123W
Marking
SA
Package
SOT-323 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_A = 25°C unless otherwise noted.
Symbol
V_DSS
V_DGR
V_GSS
I_D
T_J, T_STG
Parameter
Drain-Source Voltage
Drain-Gate Voltage R_GS ≤ 20 kΩ
Gate-Source Voltage
Drain Current
Operating and Storage Temperature Range
Continuous
Pulsed
Value
100
100
±20
0.17
0.68
-55 to +150
Unit
V
V
V
A
°C
© 2015 Fairchild Semiconductor Corporation
BSS123W Rev. 1.0
www.fairchildsemi.com