BSR56 Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel FETs

BSR56
N-Channel Low-Frequency Low-Noise
Amplifier
• This device is designed for low-power chopper or switching application
sourced from process 51
3
2
SOT-23
1
Mark: M4
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_DGO
V_GSO
I_GF
P_tot
T_STG
T_J
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Total Power Dissipation up to T_amb=40°C
Storage Temperature Range
Junction Temperature
Value
40
- 40
50
250
- 55 ~ 150
150
Units
V
V
mA
mW
°C
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_GSS
I_GSS
I_DSS
V_GS(off)
V_DS(on)
r_ds(on)
C_rss
t_d
t_r
t_off
Gate-Source Voltage
Gate Reverse Current
Zero-Gate Voltage Drain Current
Gate-Source Cut-off Voltage
Drain-Source On Voltage
Drain-Source On Reverse
Reverse Transfer Capacitance
Delay Time
Rise Time
Turn-off Time
V_DS = 0V, I_C = 1µA
V_GS = 20V
V_DS = 15V, V_GS = 0V
V_DS = 15V, I_D = 0.5nA
V_GS = 0V, I_D = 20mA
V_GS = 0V, I_D = 0
V_DS = 10V, V_GS = 0V
V_DD = 10V, V_GS(on) = 0V
I_D = 20mA, V_GS(off) = 10V
Min. Typ. Max. Units
40
V
1
nA
50
mA
4
10
V
750 mV
25
Ω
5
pF
6
nS
3
nS
25 nS
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002