BSR50 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN Darlington Transistor

BSR50
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at
collector currents to 0.5A.
• Sourced from Process 06.
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_CEO
V_CBO
V_EBO
I_C
T_J, T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Storage Temperature
Ratings
45
60
5
1.5
-55 ~ 150
Units
V
V
V
A
°C
Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
BV_CBO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE (sat)
V_BE (sat)
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C = 10mA, I_B = 0
I_C = 100µA, I_B = 0
I_E = 100µA, I_C = 0
V_CB = 45V, I_E = 0
V_EB = 4.0V, I_C = 0
V_CE = 10V, I_C = 150mA
V_CE = 10V, I_C = 0.5A
I_C = 500mA, I_B = 500µA
I_C = 1.0A, I_B = 4.0mA
I_C = 500mA, I_B = 500µA
I_C = 1.0mA, I_B = 4.0mA
Min.
45
60
5
Typ.
1,000
2,000
Max.
50
50
Units
V
V
V
nA
nA
1.3
V
1.6
0.9
V
2.2
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, May 2002