BSR18B Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

BSR18B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
Sourced from Process 23.
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Marking
T93
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
40
V_CEO
Collector-Emitter Voltage
40
V_EBO
Emitter-Base Voltage
5.0
I_C
Collector Current (DC)
200
T_J, T_STG Junction Temperature, Storage Temperature
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics * T_a = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25℃
R θ JA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Max
230
1.84
550
June 2007
Units
V
V
V
mA
°C
Units
mW
mW/℃
℃/W
©2007 Fairchild Semiconductor Corporation
1
Rev. A
www.fairchildsemi.com