BSR18A Datasheet, PDF (1/6 Pages) NXP Semiconductors – PNP switching transistor

BSR18A
C
SOT-23
Mark: T92
E
B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and
switching applications at collector currents of 10 µA to 100
mA. Sourced from Process 66.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
V_CBO
Collector-Emitter Voltage
Collector-Base Voltage
40
V
40
V
3
V_EBO
Emitter-Base Voltage
5.0
V
I_C
Collector Current - Continuous
200
mA
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
R_θJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max
*BSR18A
350
2.8
357
Units
mW
mW /°C
°C/W
1997 Fairchild Semiconductor Corporation