BSR14_12 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

BSR14
NPN General Purpose Amplifier
September 2012
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.
• Sourced from Process 19.
• See BCW65C for characteristics.
C
SOT-23
Mark:U8
E
B
Absolute Maximum Ratings* T_a = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
Collector-Emitter Voltage
40
V
V_CBO
Collector-Base Voltage
75
V
V_EBO
Emitter-Base Voltage
6.0
V
I_C
Collector Current - Continuous
800
mA
T_J, T_stg Operating and Storage Junction Temperature Range
-55 to +150
C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T_a = 25C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25C
R_JA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Max.
*BSR14
350
2.8
357
Units
mW
mW/C
C/W
© 2012 Fairchild Semiconductor Corporation
BSR14 Rev. B0
1
www.fairchildsemi.com